The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

• Published in: Semiconductor science and technology Vol. 21; no. 7; pp. 952 - 958
• Main Authors: Neimontas, K, Malinauskas, T, Aleksiejūnas, R, Sūdžius, M, Jarašiūnas, K, Storasta, L, Bergman, J P, Janzen, E
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.07.2006; Institute of Physics
• Subjects: Charge carriers: generation, recombination, lifetime, and trapping; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Fundamental areas of phenomenology (including applications); NATURAL SCIENCES; NATURVETENSKAP; Nonlinear optics; Optics; Physics; Epitaxial layers; Four-wave mixing; Doping; Photoluminescence; Heavily doped semiconductors; Impurity ionization; Measuring methods; Silicon carbides; Electron-phonon interactions; Photoelectric effect; Charge carrier recombination; Carrier lifetime; Non linear effect; Carrier mobility; Carrier density; Charge carrier injection
• ISSN: 0268-1242; 1361-6641; 1361-6641
• DOI: 10.1088/0268-1242/21/7/021

We applied a picosecond four-wave mixing technique for measurements of carrier lifetimes and diffusion coefficients in highly excited epitaxial layers, semi-insulating and heavily doped 4H-SiC substrates. Optical carrier injection at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the excited region from 1-2 νm to 50 νm, and thus determine photoelectric parameters of carrier plasma in the density range from 2 × 1016 to 1019 cm-3. Strong dependence of carrier lifetime and mobility on carrier density was found in the epitaxial layers. The origin of fast decay components, not resolved previously by photoluminescence and free-carrier absorption techniques in SiC, was attributed to nonlinear carrier recombination. Numerical modelling provided a value of bimolecular recombination coefficient equal to B ≤ (2-4) × 10-11 cm3 s-1 and verified a surface recombination velocity S ≤ 4 × 104 cm s-1. In heavily doped crystals, nonlinear carrier recombination reduced the carrier lifetime down to 1.1 ns, while in semi-insulating ones a lifetime of 1.5-2.5 ns was measured. Temperature dependences of four-wave mixing provided monopolar carrier mobility in heavily doped and bipolar one in semi-insulating crystals, and revealed the contribution of ionized impurity and phonon scattering mechanisms. © 2006 IOP Publishing Ltd.