Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures

• Published in: Advances in physics: X Vol. 5; no. 1; p. 1734083
• Main Authors: Mupparapu, Rajeshkumar, Bucher, Tobias, Staude, Isabelle
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 01.01.2020; Taylor & Francis Ltd; Taylor & Francis Group
• Subjects: Chalcogenides; Dielectrics; Emission; Emitters; Far fields; metasurfaces; Mie-resonant dielectric nanostructures; Monolayers; Nanostructure; photoluminescence; State-of-the-art reviews; Transition metal compounds; Transition metal dichalcogenides
• ISSN: 2374-6149; 2374-6149
• DOI: 10.1080/23746149.2020.1734083

Integrating transition metal dichalcogenide (TMD) monolayers with dielectric nanostructures exhibiting Mie-like resonances opens a plethora of opportunities in manipulating their excitonic emission in the near-field and far-field regimes, yielding interactions spanning from weak to strong coupling regimes, and routing valley polarized chiral emission, to name just a few. Moreover, there is a completely new path unraveled recently by realizing dielectric resonators directly from TMDs, thus combining scatterer and emitter into a single entity. This hybrid configuration is promising to realize integrated active meta-optical devices in a facile manner. In this review article, we provide an overview of the state of the art on integrating monolayers of TMDs with Mie-resonant photonic nanostructures.