Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

Printable technologies using silicon nanoink, in which nanocrystalline silicon (nc-Si) quantum dots are dispersed in solvents, are promising for novel electron and photonic device applications. The dip-coating method is applied for the first time to fabricate three-dimensionally integrated structure...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 54; no. 10; pp. 105001 - 105005
Main Authors Yamazaki, Shotaro, Nakamine, Yoshifumi, Zheng, Ran, Kouge, Masahiro, Ishikawa, Tetsuya, Usami, Koichi, Kodera, Tetsuo, Kawano, Yukio, Oda, Shunri
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.10.2015
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Summary:Printable technologies using silicon nanoink, in which nanocrystalline silicon (nc-Si) quantum dots are dispersed in solvents, are promising for novel electron and photonic device applications. The dip-coating method is applied for the first time to fabricate three-dimensionally integrated structures of nc-Si quantum dots with a uniform size of 10 nm prepared by the very high frequency plasma decomposition of silane gas. We have clarified the major problem of the dip-coating method, which is the formation of stripe structures. To circumvent this problem, we have proposed two methods: coating onto line-and-space-patterned substrates and utilization of electrophoresis force. We have successfully demonstrated the control of the position and number of layers of nc-Si by using a line-and-space-patterned substrate, however, with a limited shape. We have clarified the conditions of the formation of stripe-free regions by varying applied voltage and nc-Si concentration in the electrophoresis method.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.105001