Nanotechnology goals and challenges for electronic applications

• Published in: IEEE transactions on nanotechnology Vol. 1; no. 1; pp. 56 - 62
• Main Author: Bohr, M.T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2002; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; CNTFETs; Devices; Electronics; Exact sciences and technology; FETs; Integrated circuit interconnections; Integrated circuits; Integrated circuits by function (including memories and processors); Leakage; Logic circuits; Logic devices; Miscellaneous; Molecular electronics, nanoelectronics; MOSFET circuits; MOSFETs; Nanoscale devices; Nanostructure; Nanotechnology; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Single electron transistors; Subthreshold current; Transistors; MOSFET; Random access memory; Nanotube; Electrical wire; Carbon; MOS circuit; Nanoelectronics; Logic circuit; Molecular electronics; SRAM chips; Flash memory; Complementary MOS technology; DRAM chips; Silicon; Nanotechnology; Single electron transistors
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2002.1005426

Si metal-oxide-semiconductor field-effect transistor (MOSFET) scaling trends are presented along with a description of today's 0.13-/spl mu/m generation transistors. Some of the foreseen limits to future scaling include increased subthreshold leakage, increased gate oxide leakage, increased transistor parameter variability and interconnect density and performance. Basic device and circuit requirements for electronic logic and memory products are described. These requirements need to be kept in mind when evaluating nanotechnology options such as carbon nanotube field-effect transistors (FETs), nanowire FETs, single electron transistors and molecular devices as possible future replacements for Si MOSFETs.