Electronic versus lattice match for metal-semiconductor epitaxial growth: Pb on Ge(111)

Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accident...

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Published inPhysical review letters Vol. 107; no. 6; p. 066802
Main Authors Tang, S-J, Lee, Chang-Yeh, Huang, Chien-Chung, Chang, Tay-Rong, Cheng, Cheng-Maw, Tsuei, Ku-Ding, Jeng, H-T, Yeh, V, Chiang, Tai-Chang
Format Journal Article
LanguageEnglish
Published United States 02.08.2011
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Summary:Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a √3 × √3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1 × 1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with superimposed bilayer oscillations.
ISSN:1079-7114
DOI:10.1103/physrevlett.107.066802