Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection

• Published in: IEEE sensors journal Vol. 8; no. 3; pp. 233 - 237
• Main Authors: Ho-Young Cha, Soloviev, S., Zelakiewicz, S., Waldrab, P., Sandvik, P.M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Avalanche photodiode; Avalanche photodiodes; Current-voltage characteristics; Dark current; Devices; Electromagnetic wave absorption; Gain; Ionization; Leakage current; Multiplication; Packaging; Photodiodes; Quantum efficiency; separate absorption multiplication (SAM); Silicon carbide; Temperature dependence; Temperature distribution; Wavelengths
• ISSN: 1530-437X; 1558-1748
• DOI: 10.1109/JSEN.2007.913033

Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of ~45% at room temperature were achieved at the wavelength of 290-300 nm for a packaged device with an active area of 1 x 1 mm 2 . The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range from room temperature to 230degC.