Observation of reflex klystron oscillation phenomena in a plasma

• Published in: IEEE Transactions on Plasma Science Vol. 29; no. 4; pp. 569 - 572
• Main Author: Nagasawa, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2001; Institute of Electrical and Electronics Engineers (IEEE); Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Acceleration; Applied sciences; Devices; Electrodes; Electron beams; Electron oscillations; Electronic tubes, masers; Electronics; Exact sciences and technology; Filaments; Klystrons; Microwave tubes (eg, klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.); Optical modulation; Optical reflection; Oscillations; Particle beams; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma; Plasma accelerators; Plasma devices; Potential well; Reflexes; Waves, oscillations, and instabilities in plasmas and intense beams; Electron beams; Floating potential; Reflex klystron; Plasma filament; Oscillation frequency; Plasma potential; Secondary electron emission; Experimental study; Plasma sheaths; Plasma oscillations
• ISSN: 0093-3813; 1939-9375
• DOI: 10.1109/27.940949

Reflex klystron electron oscillation, occurring in a plasma potential well formed in a system consisting of plasma and two electrodes (filaments and a mesh grid which is at floating potential), was observed in a very simple device with only filaments and a mesh grid. This oscillation mechanism consists of three elements: 1) an acceleration region on the side in which filaments are located, which accelerates primary electron beams emitted from filaments; 2) a deceleration region on the side in which the mesh grid is located, which causes the reflection of the beams; and 3) a plasma region. In addition, the velocity modulation of primary electron beams is given by the electron plasma oscillation at the presheath on the filament side. The maximum amplitude and frequency of an oscillation obtained by this mechanism were V/sub pp/=210 mV 210 mV and f=200 MHz, respectively. These values can be controlled by the discharge potential.