Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

• Published in: Nanotechnology Vol. 25; no. 26; pp. 265201 - 9
• Main Authors: Zhou, Shuang, Su, Yaorong, Xiao, Yubin, Zhao, Ni, Xu, Jianbin, Wong, Chingping
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 04.07.2014; Institute of Physics
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Dielectrics; Electric potential; Electron mobility; Electronics; Exact sciences and technology; Field effect transistors; Fullerenes and related materials; diamonds, graphite; GFETs; Graphene; high; low-voltage; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; mobility; ODPA ATO; Physics; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Specific materials; Transistors; Voltage; CVD; Interfaces; High performance; Atmospheric pressure; Graphene; Field effect transistors; Hole mobility; Electron mobility; High k dielectric; Low field; Gates; Bilayers
• ISSN: 0957-4484; 1361-6528; 1361-6528
• DOI: 10.1088/0957-4484/25/26/265201

In this study, a solution-processed bilayer high-k dielectric (Al2O y TiO x , abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm2 V−1 s−1 and electron mobility of 3232 cm2 V−1 s−1 were obtained in a small gate voltage range from −3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.