Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications

Thin gold (Au) films (10 nm) are deposited on different substrates by using a e-beam deposition system. Compared with sapphire and SiO 2 surfaces, longer migration length of the Au adatoms is observed on MoS 2 surfaces, which helps in the formation of a single-crystal Au film on the MoS 2 surface at...

Full description

Saved in:
Bibliographic Details
Published inScientific reports Vol. 10; no. 1; p. 14463
Main Authors Zhang, Yu-Wei, Wu, Bo-Yu, Chen, Kuan-Chao, Wu, Chao-Hsin, Lin, Shih-Yen
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 02.09.2020
Nature Publishing Group
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Thin gold (Au) films (10 nm) are deposited on different substrates by using a e-beam deposition system. Compared with sapphire and SiO 2 surfaces, longer migration length of the Au adatoms is observed on MoS 2 surfaces, which helps in the formation of a single-crystal Au film on the MoS 2 surface at 200 °C. The results have demonstrated that with the assistance of van der Waals epitaxy growth mode, single-crystal 3D metals can be grown on 2D material surfaces. With the improved crystalline quality and less significant Au grain coalescence on MoS 2 surfaces, sheet resistance 2.9 Ω/sq is obtained for the thin 10 nm Au film at 100 °C, which is the lowest value reported in literature. The highly conductive thin metal film is advantageous for the application of backend interconnects for the electronic devices with reduced line widths.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-71520-x