Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

• Published in: IEEE journal of selected topics in quantum electronics Vol. 7; no. 2; pp. 242 - 248
• Main Authors: Niskiyama, N., Arai, M., Shinada, S., Azuchi, M., Miyamoto, T., Koyama, F., Iga, K.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2001; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anisotropic magnetoresistance; Anisotropy; Capacitive sensors; Gallium arsenide; Gallium arsenides; Lasers; Optical polarization; Polarization; Quantum well lasers; Quantum wells; Strain control; Surface emitting lasers; Threshold current; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; Wavelengths
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/2944.954136

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 /spl mu/m emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 /spl mu/m on GaAs (311)B substrate for the first time. The 1.15-/spl mu/m edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm/sup 2/. The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 /spl mu/m, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170/spl deg/C without a heat sink was achieved.