Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

• Published in: Journal of crystal growth Vol. 241; no. 3; pp. 320 - 324
• Main Authors: Sung, Li-Wei, Lin, Hao-Hsiung, Chia, Chih-Ta
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2002; Elsevier
• Subjects: A1. Crystal structure; A1. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; A1. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; A1. Crystal structure; 81.10.−h; High-frequency discharges; Cubic lattices; Raman spectra; Inorganic compounds; Gallium nitrides; Photoluminescence; Operating mode; Crystal growth from vapors; Experimental study; Crystal perfection; Plasma sources; Thin films; Optical properties; Molecular beam epitaxy; Heterojunctions; GSMBE method; Fabrication structure relation; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01289-7

Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at T s=720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.