Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

• Published in: IEEE journal of solid-state circuits Vol. 40; no. 3; pp. 726 - 735
• Main Authors: Kwangseok Han, Gil, J., Seong-Sik Song, Jeonghu Han, Hyungcheol Shin, Choong-Ki Kim, Kwyro Lee
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Applied sciences; Channels; Circuit properties; Design optimization; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Four noise parameters; Heating; induced gate noise; Integrated circuits; Low noise; low noise amplifier; Low-noise amplifiers; Mathematical models; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; MOSFETs; Noise; noise correlation coefficients; Noise measurement; Operational amplifiers; Predictive models; RF CMOS; Semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermal noise; Transistors; Tuners; Velocity measurement; Correlation coefficient; MOSFET; induced gate noise; Low noise amplifier; Thermal behavior; Short channel; Tuner; Optimization; RF CMOS; Four noise parameters; noise correlation coefficients; Complementary MOS technology; Thermal noise; Radiofrequency integrated circuits; CMOS integrated circuits; Miniaturization; Microwave amplifier; High frequency; Figure of merit
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2005.843637

Taking a velocity saturation effect and a carrier heating effect in the gradual channel region, complete thermal noise modeling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented and verified extensively with experimentally measured data. All of the four noise models have excellently predicted experimental data with maximal error less than 10% for the deep-submicron MOSFETs. Using these models and a simultaneous matching technique for both optimal noise and power, a low noise CMOS amplifier optimized for 5.2-GHz operation has been designed and fabricated. Experiments using an external tuner show that both NF/sub 50/ and NF/sub min/ are very close to 1.1 dB, which is an excellent figure of merit among reported LNAs.