Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

• Published in: Journal of colloid and interface science Vol. 326; no. 1; pp. 186 - 190
• Main Authors: Ha, Tae-Jung, Park, Hyung-Ho, Jung, Sang-Bae, Ryu, Hojun, Yu, Byoung-Gon
• Format: Journal Article
• Language: English
• Published: San Diego, CA Elsevier Inc 01.10.2008; Elsevier
• Subjects: Brij-76; Calcination; Chemistry; Colloidal state and disperse state; Exact sciences and technology; General and physical chemistry; HMDS; MTES; Ordered mesoporous silica film; Porous materials; Surface physical chemistry; MTES; Calcination; Ordered mesoporous silica film; HMDS; Brij-76; Binary compound; Electrical properties; Film; Integrated circuit; Ordered mesoporous silica film;HMDS;Calcination;MTES;Brij-76; Mechanical properties; Porous material; Precursor; Silica; Block copolymer; Mesoporosity
• ISSN: 0021-9797; 1095-7103
• DOI: 10.1016/j.jcis.2008.07.024

To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted OH with Si(CH 3) 3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C. Though substituted Si(CH 3) 3 groups induce stress on silica wall in pore structure, calcination over 300 °C can reduce the stress and enhance the dielectric and mechanical properties of mesoporous film.