Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials

• Published in: Journal of crystal growth Vol. 468; pp. 129 - 134
• Main Authors: Takiguchi, Yuki, Miyajima, Shinsuke
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2017; Elsevier BV
• Subjects: A1. Characterization; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; Annealing; B1. Gallium compounds; B1. Oxides; Chemical compounds; Chemical vapor deposition; Crystal structure; Gallium; Gallium oxides; Low temperature; Metalorganic chemical vapor deposition; Morphology; Nanowires; Polycrystals; A3. Polycrystalline deposition; B1. Oxides; B1. Gallium compounds; A1. Characterization; A3. Metalorganic chemical vapor deposition
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2016.11.005

Low temperature metalorganic chemical vapor deposition using trimethylgallium and water was investigated. The surface morphology of the film was almost flat at a deposition temperature below 182°C. This flat film was a mixture of nanocrystalline and amorphous phase. The film deposited at a temperature of 272°C resulted in a nanowire structure. X-ray diffraction measurements revealed that the nanowire film was a mixture of gallium hydroxide, gallium oxyhydroxide, and gallium tohdite or gallium oxide. We also found that post-deposition annealing above 600°C significantly changed the crystal structure of the both flat and nanowire films. Monoclinic gallium oxide phase was dominant after the post-deposition annealing above 600°C. •Low temperature MOCVD of gallium oxide films using trimethylgallium and water.•The film structure was changed from flat to nanowire at a deposition temperature of 272°C.•β-Ga2O3 phase appears after post-deposition annealing at 600°C.