High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

• Published in: IEEE transactions on electron devices Vol. 55; no. 11; pp. 3246 - 3250
• Main Authors: Xu, Xiaoyan, Wang, Runsheng, Huang, Ru, Zhuge, Jing, Chen, Gang, Zhang, Xing, Wang, Yangyuan
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bulk silicon; Channels; CMOS; Compatibility; Cooling; Design. Technologies. Operation analysis. Testing; Devices; double gate; Double-gate FETs; Drains; Electronics; Exact sciences and technology; FinFET; FinFETs; Insulators; Integrated circuits; Leakage; Microelectronics; MOS; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; short-channel effect; Silicon; Silicon on insulator technology; Transistors; High strength current; High performance; MOSFET; Dielectric materials; FinFET; Short channel; Dual gate transistor; Thermal dissipation; Bulk silicon; Self aligned technology; double gate; MOS; Manufacturing process; Complementary MOS technology; short- channel effect; Parasitic resistance; Comparative study
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2008.2004646

A new body-on-insulator (BOI) FinFET device structure based on bulk-Si substrate has been proposed and experimentally demonstrated in this paper. In comparison with other bulk FinFETs, the BOI FinFET features the localized insulator below the Si-Fin body, which can achieve both low source/drain (S/D) parasitic resistance and effective suppression of the S/D leakage beneath the Si-Fin channel, as well as good heat dissipation capability. The device fabrication process is basically compatible with conventional CMOS technology. High drive current, low subthreshold swing, and excellent short-channel behavior are observed in the fabricated BOI FinFETs.