Influence of the Sintering Temperature of Al-Doped Higher Manganese Silicide for Improved Thermoelectric Properties

• Published in: Journal of nanoscience and nanotechnology Vol. 19; no. 3; p. 1699
• Main Authors: Son, Si-Young, Baek, Yeon-Jin, Beck, Ji-Hyun, Kim, Jong-Bae, Yang, Seung-Ho, Kang, Yong-Ho, Hyun, Soong-Keun
• Format: Journal Article
• Language: English
• Published: United States 01.03.2019
• ISSN: 1533-4880
• DOI: 10.1166/jnn.2019.16188

Higher manganese silicide is generally used in thermoelectric devices between 700 K and 900 K. MnSi Al samples were fabricated by two continuous solid-state reactions followed by hot pressing because the electrical conductivity of all the samples is strongly dependent on Al doping, showing superior thermoelectric performance to the as-synthesized higher manganese silicide. The solid-state-reaction was performed at 1173 K for 6 hours. The effects of the sintering temperature were examined by sintering at three different temperatures: 1273 K, 1323 K and 1373 K. For the surface, microstructural, and electrical properties, scanning electron microscopy, X-ray diffraction, and a series of electric conductivity, Seebeck coefficient, and thermal conductivity analyses were conducted, respectively. As a result, the optimal process temperature for Al-doped higher manganese silicide using a hot-press technique was determined.