Photomodulated Second-Harmonic Generation at Silicon-Silicon Oxide Interfaces: From Modeling to Application

A photomodulation technique based on the nonlinear-optical process of second-harmonic generation (SHG) is developed for characterizing Si /SiO2 interfaces and Si-based MOS structures. The mechanisms of photoinduced SHG are discussed and a quantitative model of the SHG response is formulated. A metho...

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Published inJapanese Journal of Applied Physics Vol. 42; no. Part 1, No. 11; pp. 6731 - 6736
Main Authors Mishina, Elena D., Tanimura, Nobuko, Nakabayashi, Seiichiro, Aktsipetrov, Oleg A., Downer, Michael C.
Format Journal Article
LanguageEnglish
Published 2003
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Summary:A photomodulation technique based on the nonlinear-optical process of second-harmonic generation (SHG) is developed for characterizing Si /SiO2 interfaces and Si-based MOS structures. The mechanisms of photoinduced SHG are discussed and a quantitative model of the SHG response is formulated. A method of extracting parameters of the Si /SiO2 interface from in situ-photomodulated-SHG measurements is proposed. The accuracy of the technique for measuring parameters of Si-based MOS structures is estimated. 23 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.6731