Photoluminescence Properties of ZnO Thin Films Grown by Electrochemical Deposition

Authors investigated the photoluminescence properties of ZnO thin films grown by electrochemical deposition. By applying a thermal treatment at 500 C in O2 atmosphere, a free-exciton photoluminescence is observed. Furthermore, under high-density excitation conditions, a photoluminescence band appear...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 42; no. Part 2, No. 8A; pp. L935 - L937
Main Authors Kim, DaeGwi, Terashita, Toru, Tanaka, Isamu, Nakayama, Masaaki
Format Journal Article
LanguageEnglish
Published 01.08.2003
Online AccessGet full text

Cover

More Information
Summary:Authors investigated the photoluminescence properties of ZnO thin films grown by electrochemical deposition. By applying a thermal treatment at 500 C in O2 atmosphere, a free-exciton photoluminescence is observed. Furthermore, under high-density excitation conditions, a photoluminescence band appears on the low-energy side of the free exciton. The photoluminescence intensity exhibits an almost quadratic dependence on the excitation power, and the energy spacing between the photoluminescence band and the free exciton is almost equal to the exciton binding energy of ZnO. Authors conclude from the above results that the photoluminescence band under high-density excitation conditions originates from an inelastic scattering process of excitons, the so-called P emission. 12 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
DOI:10.1143/JJAP.42.L935