The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

• Published in: Japanese Journal of Applied Physics Vol. 58; no. SC; p. SC0801
• Main Authors: Jena, Debdeep, Page, Ryan, Casamento, Joseph, Dang, Phillip, Singhal, Jashan, Zhang, Zexuan, Wright, John, Khalsa, Guru, Cho, Yongjin, Xing, Huili Grace
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.06.2019; Japanese Journal of Applied Physics
• Subjects: Alloy systems; Diamonds; Diodes; Electronic devices; Ferrimagnetism; Ferroelectric materials; Ferroelectricity; Gallium nitrides; Heterojunctions; Heterostructures; Magnetic properties; Metal nitrides; Niobium nitride; Organic light emitting diodes; Photonics; Semiconductor devices; Semiconductor materials; Transistors; Transition metals
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/1347-4065/ab147b

The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of "new" nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by nitride semiconductors.