Enhanced Extraction Efficiency of InGaN-Based Light-Emitting Diodes Using 100-kHz Femtosecond-Laser-Scribing Technology

A femtosecond laser was focused inside a thinned sapphire substrate to scribe the substrate and separate nitride-based light-emitting diodes (LEDs). The LED scribed by using the femtosecond laser exhibits an 11% enhancement in the output power at 20 mA, compared to that scribed by using the nanoseco...

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Bibliographic Details
Published inIEEE electron device letters Vol. 31; no. 3; pp. 213 - 215
Main Authors LEE, Jae-Hoon, KIM, Nam-Seung, HONG, Sang-Su, LEE, Jung-Hee
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.03.2010
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Ablation
Applied sciences
debris
Electronics
Exact sciences and technology
Femtosecond
femtosecond laser
Gallium nitride
GaN
High speed
Laser ablation
Lasers
Light emitting diodes
light-emitting diode (LED)
Microelectronic fabrication (materials and surfaces technology)
Nanocomposites
Nanomaterials
nanosecond laser
Nanostructure
Optical pulses
Optoelectronic devices
Power generation
Power lasers
pulsewidth
Sapphire
scribing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
Space vector pulse width modulation
Substrates
Ultrafast electronics
Performance evaluation
Femtosecond
nanosecond laser
Pulse width
Output power
pulsewidth
Micromachining
scribing
light-emitting diode (LED)
Ablation
Light emitting diode
Laser writing
Microelectronic fabrication
femtosecond laser
GaN
Optoelectronic device
debris
ns range
Damaging
sapphire
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Summary:A femtosecond laser was focused inside a thinned sapphire substrate to scribe the substrate and separate nitride-based light-emitting diodes (LEDs). The LED scribed by using the femtosecond laser exhibits an 11% enhancement in the output power at 20 mA, compared to that scribed by using the nanosecond laser, which is attributed to the reduction in both debris and thermal damage of the sapphire substrate. Femtosecond-laser scribing also has an advantage of high-speed processing because the extremely short pulsewidth enables it to easily reach very high peak laser intensity.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2037592