Growth of manganese oxide thin films by atomic layer deposition

• Published in: Thin solid films Vol. 444; no. 1; pp. 44 - 51
• Main Authors: Nilsen, O., Fjellvåg, H., Kjekshus, A.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.11.2003; Elsevier Science
• Subjects: Atomic layer deposition (ALD); Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Manganese oxide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Manganese oxide; Atomic layer deposition (ALD); Atomic layer method; Inorganic compounds; Electrical conductivity; Semiconductor materials; Electrical properties; Transition element compounds; Roughness; Operating mode; Polycrystals; Surfaces; Crystal growth from vapors; Experimental study; Thin films; CVD; Manganese oxides; Microstructure
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(03)01101-5

Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd) 3 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 138 and 210 °C. Films have been deposited on both soda-lime glass and Si(100) single crystals. The electrical resistivities of as-deposited films grown on soda-lime glass are measured to be 0.3–3.2 Ω cm (linear four-point-probe measurements).