ZnS-Based Photonic Crystals

Recent studies of the application of II–VI materials to the fabrication of photonic crystals are reported. Modeling studies show the potential of ZnS photonic crystals to provide a new method of controlling the emission characteristics of this material system so as to enhance color, intensity and de...

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Published inPhysica status solidi. B. Basic research Vol. 229; no. 2; pp. 949 - 960
Main Authors Park, W., King, J.S., Neff, C.W., Liddell, C., Summers, C.J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Berlin WILEY-VCH Verlag Berlin GmbH 01.01.2002
WILEY‐VCH Verlag Berlin GmbH
Wiley
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Summary:Recent studies of the application of II–VI materials to the fabrication of photonic crystals are reported. Modeling studies show the potential of ZnS photonic crystals to provide a new method of controlling the emission characteristics of this material system so as to enhance color, intensity and decay time. The same structures are also shown to possess giant refraction and dispersion properties that can be used to control (collect, focus and steer) light. The fabrication of these period structures is addressed. Two approaches are being considered: the fabrication of two‐dimensional ZnS photonic crystals by conventional electron beam lithography and the formation of three‐dimensional ZnS photonic crystals by cost‐effective self‐assembly methods. ZnS and related II–VI compounds are very attractive for applications in photonic crystal devices operating in the visible and near IR region due to their high indices of refraction and large bandgaps that make them highly transparent in the visible. We report recent studies on the self‐assembly of nanoparticles and subsequent ZnS infiltration techniques that can be used to control the emission and out‐coupling properties of phosphors embedded in a photonic crystal.
Bibliography:istex:58D16B7B1090CD1BD6EDB34FAA914F5BAE54BE24
ark:/67375/WNG-X4JZ0H5Q-Z
ArticleID:PSSB949
ISSN:0370-1972
1521-3951
DOI:10.1002/1521-3951(200201)229:2<949::AID-PSSB949>3.0.CO;2-K