Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces

We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1.0...

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Published inMaterials Vol. 15; no. 5; p. 1888
Main Authors Ong, Jia-Juen, Chiu, Wei-Lan, Lee, Ou-Hsiang, Chiang, Chia-Wen, Chang, Hsiang-Hung, Wang, Chin-Hung, Shie, Kai-Cheng, Yang, Shih-Chi, Tran, Dinh-Phuc, Tu, King-Ning, Chen, Chih
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 03.03.2022
MDPI
Subjects
Bonded joints
Contact resistance
Cu/SiO2 hybrid bonding
Electroplating
Etching
highly -nanotwinned Cu
Interfaces
Low pressure
Low temperature
low temperature bonding
microelectronic packaging
Microscopy
Silicon dioxide
Temperature
Thermal stability
United States > US
Germany
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Summary:We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1.06 MPa. The bonding process can be accomplished by a 12-inch wafer-to-wafer scheme. The measured specific contact resistance is 1.2 × 10−9 Ω·cm2, which is the lowest value reported in related literature for Cu-Cu joints bonded below 300 °C. The joints possess excellent thermal stability up to 375 °C. The bonding mechanism is also presented to provide more understanding on hybrid bonding.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15051888