Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

• Published in: Materials Vol. 14; no. 19; p. 5474
• Main Authors: Lee, Hsin-Ying, Liu, Day-Shan, Chyi, Jen-Inn, Chang, Edward Yi, Lee, Ching-Ting
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 22.09.2021; MDPI
• Subjects: Aluminum gallium nitrides; Cooling; double-channel metal oxide semiconductor high-electron mobility transistors; Electrodes; Etching; Flicker; flicker noise; Ga2O3 gate oxide layer; Gallium nitrides; Gallium oxides; High electron mobility transistors; Laser arrays; Lasers; Lattice matching; Low noise; Metal oxide semiconductors; Metals; multiple-mesa-fin-channel array; Nitrogen; Noise; Organic chemicals; Photolithography; Transconductance; Transistors; vapor cooling condensation system
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma14195474

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al0.18Ga0.82N/GaN channel 1 and band discontinued lattice-matched Al0.83In0.17N/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga2O3 gate oxide layer and the high-quality interface between the Ga2O3 and GaN layers, low noise power density of 8.7 × 10−14 Hz−1 and low Hooge’s coefficient of 6.25 × 10−6 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.