Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

• Published in: Materials Vol. 13; no. 20; p. 4510
• Main Authors: Han, Xiaotong, Duan, Peng, Peng, Yan, Wang, Xiwei, Xie, Xuejian, Yu, Jinying, Hu, Xiufei, Wang, Dufu, Hu, Xiaobo, Xu, Xiangang
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 12.10.2020; MDPI
• Subjects: Basal plane; basal plane bending; Chemical vapor deposition; Diamonds; growth temperature; high-resolution X-ray diffraction; homoepitaxial single-crystal diamond (SCD); Plasma; Radiation; Single crystals; Substrates; Temperature; Temperature distribution
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma13204510

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.