Modification of GaAs surface by low-current Townsend discharge

• Published in: Journal of physics. D, Applied physics Vol. 43; no. 27; p. 275302
• Main Authors: Gurevich, E L, Kittel, S, Hergenröder, R, Astrov, Yu A, Portsel, L M, Lodygin, A N, Tolmachev, V A, Ankudinov, A V
• Format: Journal Article
• Language: English
• Published: IOP Publishing 14.07.2010
• Subjects: Atomic force microscopy; Discharge; Gallium arsenide; Gallium arsenides; Oxides; Polarity; Semiconductors; Townsend discharge; 68.47.Fg; 68.37.Ps; 52.80.Dy; 52.77.Bn
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/43/27/275302

The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge at a current density j = 60 µA cm −2 are studied by means of x-ray photoelectron spectroscopy, ellipsometry and atomic force microscopy. It is shown that an exposure to low-energy ions (<1 eV) changes the crystal structure of the semiconductor for a depth of up to 10–20 nm, although the stoichiometric composition does not change. The exposure to low-energy electrons (<10 eV) forms an oxide layer, which is 5–10 nm thick. Atomic force microscopy demonstrates that the change in the surface potential of the samples may exceed 100 mV, for both discharge polarities, while the surface roughness does not increase.