Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation

• Published in: IEEE transactions on electron devices Vol. 56; no. 9; pp. 2092 - 2098
• Main Authors: Mookerjea, S., Krishnan, R., Datta, S., Narayanan, V.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Delay; Devices; Electric, optical and optoelectronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Gates (circuits); Indium arsenide (InAs); Inverters; Logic gates; Miller capacitance; MOSFET circuits; MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Simulation; Switches; switching current trajectory; Theoretical study. Circuits analysis and design; Transistors; tunnel field-effect transistors (TFETs); Tunnels (transportation); Inverter; MOSFET; Circuit simulation; Tunnel effect; Tunnel transistors; Indium arsenide (InAs); Switching; MOSFETs; Field effect transistor; Miller capacitance; tunnel field-effect transistors (TFETs); Capacitance; Delay time; switching current trajectory
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2009.2026516

Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance ( C EFF ) and drive current ( I EFF ) for delay (tau f = 0.69 R sw C EFF , where R sw = V DD /2 I EFF ) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where C EFF is approximately equal to the gate capacitance ( C gg ) , in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.