Direct evidences of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

Direct evidences of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B are presented in this work. Scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction measurements in coplanar and gra...

Full description

Saved in:
Bibliographic Details
Published inJournal of nanoscience and nanotechnology Vol. 9; no. 8; p. 4673
Main Authors González, J C, Malachias, A, Andrade, R-Ribeiro, de Sousa, J C, Moreira, M V B, de Oliveira, A G
Format Journal Article
LanguageEnglish
Published United States 01.08.2009
Online AccessGet more information

Cover

More Information
Summary:Direct evidences of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B are presented in this work. Scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of an In0.86Ga0.14As alloy. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
ISSN:1533-4880
DOI:10.1166/jnn.2009.1285