Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

• Published in: IEEE electron device letters Vol. 29; no. 7; pp. 775 - 777
• Main Authors: HONG, Seung-Ho, CHOI, Gil-Bok, BAEK, Rock-Hyun, KANG, Hee-Sung, JUNG, Sung-Woo, JEONG, Yoon-Ha
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; CMOS technology; Cryogenics; Cutoff frequency; Devices; Electronics; Exact sciences and technology; Extraterrestrial measurements; Gates; low temperature; maximum oscillation frequency; Molecular electronics, nanoelectronics; MOSFET circuits; MOSFETs; Nanocomposites; Nanomaterials; nanoscale MOSFET; Nanostructure; Oscillations; Radio frequencies; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature distribution; Temperature sensors; Transistors; Voltage; Space application; Performance evaluation; MOSFET; Cutoff frequency; Oscillation frequency; low temperature; Nanoelectronics; nanoscale MOSFET; Cut off frequency; maximum oscillation frequency; Capacitance; Current gain; Room temperature
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2000614

RF characteristics of a nanoscale MOSFET are measured and analyzed at temperatures ranging from 4.2 to 300 K for deep-space RF applications. This device shows a 197-GHz current gain cutoff frequency (f T ) and a 162-GHz maximum oscillation frequency (f max ) when operating at liquid-helium temperature, which represent a 60% and 80% improvement compared to room temperature performances, respectively, f T continually improves as the temperature decreases to near-liquid-helium temperature due to the decrease of gate capacitance (C gg ). f max decreases as the temperature is lowered below 25 K due to the increase of gate resistance (R g ).