Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

• Published in: IEEE electron device letters Vol. 30; no. 8; pp. 870 - 872
• Main Authors: Lijie Zhang, Ru Huang, Dejin Gao, Dake Wu, Yongbian Kuang, Poren Tang, Wei Ding, Wang, A.Z.H., Yangyuan Wang
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; CMOS; CMOS process; CMOS technology; Conduction mechanism; Copper; Data analysis; Design. Technologies. Operation analysis. Testing; Devices; Electric potential; Electric, optical and optoelectronic circuits; Electrodes; Electronic circuits; Electronics; Exact sciences and technology; Integrated circuits; Lithography; memory; Nonvolatile memory; resistive switching; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon dioxide; silicon monoxide (SiO); Switches; Switching; Switching, multiplexing, switched capacity circuits; Voltage; Performance evaluation; memory; Three dimensional structure; Complementary MOS technology; Integrated circuit; Conduction mechanism; Selector switch; resistive switching; Switching; silicon monoxide (SiO)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2024650

In this letter, a reliable nonvolatile resistive switching device based on silicon monoxide (SiO) is demonstrated. The device was fabricated with a low-temperature process that can be compatible with a CMOS back-end process and attractive for 3-D memory integration. The fabricated Cu/SiO/W device was found to have a repeatable unipolar resistive switching behavior. The results show excellent on/off resistance ratio (over 10 4 ) and good retention performance. The switching mechanism of the device is analyzed by experimental data and probably can be attributed to the behaviors of copper ions in the bulk of SiO under different voltages.