Flexible Three-Dimensional Organic Field-Effect Transistors Fabricated by an Imprinting Technique

Flexible three‐dimensional organic field‐effect transistors with high performance are developed utilizing simple imprint technology. Owing to the multiplied vertical channels with short channel length of 0.9 μm, the devices show high output current density and fast dynamic response within 140 ns, wh...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 24; no. 38; pp. 5212 - 5216
Main Authors Nakahara, Rie, Uno, Mayumi, Uemura, Takafumi, Takimiya, Kazuo, Takeya, Jun
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 02.10.2012
WILEY‐VCH Verlag
Subjects
Elastic Modulus
Electrodes
flexible
imprint lithography
Molecular Imprinting
organic field-effect transistor
organic semiconductor
Polyethylene Terephthalates - chemistry
Transistors, Electronic
Ultraviolet Rays
vertical channel
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Summary:Flexible three‐dimensional organic field‐effect transistors with high performance are developed utilizing simple imprint technology. Owing to the multiplied vertical channels with short channel length of 0.9 μm, the devices show high output current density and fast dynamic response within 140 ns, which corresponds to as high as 7 MHz. The present fabrication process using imprint technique has advantages in low‐cost, a high throughput, and easy processes.
Bibliography:istex:2A4F60B6788AE9AD272EFD7BF72FEBC00B4EA463
ark:/67375/WNG-QQFWBFQW-T
ArticleID:ADMA201201234
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201201234