On the Origin of Contact Resistances of Organic Thin Film Transistors

A model is presented that describes the gate‐voltage‐dependent contact resistance and channel‐length‐dependent charge carrier mobility of small‐molecule‐based organic thin‐film transistors in top and bottom drain/source contact configuration.

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 24; no. 29; pp. 4005 - 4009
Main Authors Marinkovic, Marko, Belaineh, Dagmawi, Wagner, Veit, Knipp, Dietmar
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 02.08.2012
WILEY‐VCH Verlag
Subjects
contact resistance
Electrodes
Naphthacenes - chemistry
Organic Chemicals - chemistry
organic TFTs
Organosilicon Compounds - chemistry
pentacene
thin-film transistors
Transistors, Electronic
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Summary:A model is presented that describes the gate‐voltage‐dependent contact resistance and channel‐length‐dependent charge carrier mobility of small‐molecule‐based organic thin‐film transistors in top and bottom drain/source contact configuration.
Bibliography:istex:1708AF61D56F9DCDE16D0135236238D094E253A3
ArticleID:ADMA201201311
ark:/67375/WNG-9ZZHR8CF-N
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201201311