Localized electron irradiation methods and their application to detection of flow-field of point defects

• Published in: Journal of electron microscopy Vol. 53; no. 1; p. 21
• Main Authors: Arai, Shigeo, Satoh, Yuhki, Arakawa, Kazuto, Morita, Chiaki, Kiritani, Michio
• Format: Journal Article
• Language: English
• Published: Japan 01.01.2004
• Subjects: Copper - chemistry; Microscopy, Electron - methods; Temperature
• ISSN: 0022-0744
• DOI: 10.1093/jmicro/53.1.21

We propose new techniques of electron irradiation for studying the kinetics of simple point defects and their agglomeration, by making the most use of the intrinsic function of an ultrahigh-voltage scanning transmission electron microscope. The methods enable us to realize a very high defect production rate at a localized area and create a spot or band-shape source of point defects. The present methods were applied to an attempt to detect the point defects flowing out of a very localized area, examining the growth and shrinkage of pre-introduced interstitial clusters. At low temperatures where vacancies are immobile, outflow of the interstitials was observed. In contrast, at an elevated temperature where vacancies are mobile, outflow of the vacancies seemed to play a dominant role in the apparent secondary defect reactions. A possible explanation to aid understanding of the present results is proposed.