Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

• Published in: Infrared physics & technology Vol. 70; pp. 6 - 11
• Main Authors: Srinivasan, T., Mishra, P., Jangir, S.K., Raman, R., Sridhara Rao, D.V., Rawal, D.S., Muralidharan, R.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2015
• Subjects: Infra red detector; Molecular Beam Epitaxy; Quantum dot; Molecular Beam Epitaxy; Infra red detector; Quantum dot
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2014.12.001

•Molecular Beam Epitaxy growth of DWELL QDIP.•Silicon doping.•Detector response.•Temperature dependance. We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50Å and 40Å were compared. A 2–8μm band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77K. The specific peak detectivity D∗ be 0.8×109Jones for one of the detectors.