Pocket implantation effect on drain current flicker noise in analog nMOSFET devices

• Published in: IEEE transactions on electron devices Vol. 51; no. 8; pp. 1262 - 1266
• Main Authors: Wu, J.-W., Cheng, C.-C., Chiu, K.-L., Guo, J.-C., Lien, W.-Y., Chang, C.-S., Huang, G.-W., Wang, T.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CMOS analog integrated circuits; Density; Devices; Drains; Flicker; Implantation; Ion implantation; MOSFETs; Noise; Pocket; Random noise; Semiconductor device modeling; Threshold voltage
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2004.831369

The pocket implantation effect on drain current flicker noise in 0.13 /spl mu/m CMOS process based high performance analog nMOSFETs is investigated. Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution along the channel. An analytical flicker noise model to account for a pocket doping effect is proposed. In our model, the local threshold voltage and the width of the pocket implant region are extracted from the measured reverse short-channel effect, and the oxide trap density is extracted from a long-channel device. Good agreement between our model and the measurement result is obtained without other fitting parameters.