Robust formation of quantum dots in GaAs/AlGaAs heterostructures for single-electron metrology

The robust and reproducible formation of a quantum dot is key for the development of tunable barrier single-electron pumps as a future quantum current standard. We investigate the fabrication process and perform electrical characterizations at cryogenic temperatures of quantum dots realized in a GaA...

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Published inMetrologia Vol. 56; no. 1; pp. 14002 - 14008
Main Authors Gerster, T, Müller, A, Freise, L, Reifert, D, Maradan, D, Hinze, P, Weimann, T, Marx, H, Pierz, K, Schumacher, H W, Hohls, F, Ubbelohde, N
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2019
Subjects
Aluminum gallium arsenides
Cryogenic temperature
Electrons
GaAs/AlGaAs heterostructure based quantum dots
Gallium arsenide
Heterostructures
Low temperature physics
Parameter estimation
Pumps
quantized current source
Quantum dots
Robustness
robustness of Coulomb blockade
Single electrons
single-electron pumps
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Summary:The robust and reproducible formation of a quantum dot is key for the development of tunable barrier single-electron pumps as a future quantum current standard. We investigate the fabrication process and perform electrical characterizations at cryogenic temperatures of quantum dots realized in a GaAs/AlGaAs heterostructure with lateral potential confinement by a combination of a shallow-etch technique and metallic top-gates. Stable geometric parameters of the lithography (5% deviation) in combination with a homogeneous heterostructure resulted in the robust and reproducible quantum dot formation for 37 out of 39 tested devices.
Bibliography:Bureau International des Poids et Mesures
MET-101293.R2
ISSN:0026-1394
1681-7575
DOI:10.1088/1681-7575/aaf4aa