Characteristics of Al/p-Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes

Al/p‐Cu0.5Ag0.5InSe2 polycrystalline thin film Schottky barrier diodes have been prepared. The current‐voltage, capacitance‐voltage and photores ponse have been investigated. Various important physical parameters of the sediodes were derived from these measurements.

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Bibliographic Details
Published inCrystal research and technology (1979) Vol. 36; no. 6; pp. 571 - 576
Main Authors Rao, G. Venkata, Chandra, G. Hema, Hussain, O.M., Uthanna, S., Srinivasulu Naidu, B.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag Berlin GmbH 01.07.2001
WILEY‐VCH Verlag Berlin GmbH
Wiley-VCH
Subjects
Applied sciences
capacitance-voltage
Cu0.5Ag0.5InSe2 thin films
current-voltage
Diodes
Electronics
Exact sciences and technology
photoresponse
Schottky barrier diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silver selenides
Copper selenides
Thin film device
Quaternary compound
Indium selenides
Voltage current curve
Schottky barrier diode
Photoconductivity
Voltage capacity curve
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Summary:Al/p‐Cu0.5Ag0.5InSe2 polycrystalline thin film Schottky barrier diodes have been prepared. The current‐voltage, capacitance‐voltage and photores ponse have been investigated. Various important physical parameters of the sediodes were derived from these measurements.
Bibliography:ark:/67375/WNG-FCCQQDKC-F
ArticleID:CRAT571
istex:46138EEA47776A88F1AF856FAFF024F045FD5D0C
ISSN:0232-1300
1521-4079
DOI:10.1002/1521-4079(200107)36:6<571::AID-CRAT571>3.0.CO;2-R