Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film

Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated...

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Published inJournal of materials science & technology Vol. 31; no. 5; pp. 484 - 488
Main Author A.de Pablos-Martín S.Tismer Th.Hche
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2015
Subjects
Absorbing film
Aluminum
bondin
Bonding
film;Sapphire
Irradiation
Laser
Laser welding
Lasers
Sapphire
Sapphire wafer bonding
Scanning acoustic microscopy
Thin films
Titanium
wafer
welding;Absorbing
Laser welding
Absorbing film
Sapphire wafer bonding
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Summary:Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.
Bibliography:Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.
A.de Pablos-Martín;S.Tismer;Th.Hche;Fraunhofer Institute for Mechanics of Materials IWM,Walter-Hlse-Str.1,06120 Halle,Germany
Laser welding;Absorbing film;Sapphire wafer bondin
21-1315/TG
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1005-0302
1941-1162
DOI:10.1016/j.jmst.2014.12.007