A comparison of linear handset power amplifiers in different bipolar technologies

• Published in: IEEE journal of solid-state circuits Vol. 39; no. 10; pp. 1746 - 1754
• Main Authors: Nellis, K., Zampardi, P.J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.10.2004; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Applied sciences; BiCMOS integrated circuits; Circuit properties; Circuits; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Measurement; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Multiaccess communication; Performance evaluation; Power amplifiers; Ruggedness; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon germanides; Silicon germanium; Simulation; Telephone sets; Transistors; Performance evaluation; code division multiple access (CDMA); Bipolar transistors; Binary compound; Gallium arsenides; Output power; Power gain; Wireless telecommunication; Linear amplification; Indium phosphide; Junction transistors; Microwave circuit; Silicon; power amplifiers; Heterojunction bipolar transistors; Monolithic integrated circuit; Silicon Germanium; efficiency; Bipolar transistor; Experimental result; Linearity; Code division multiple access; heterojunction bipolar transistors (HBTs); Power amplifier; Current gain; Comparative study
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2004.833761

This work evaluates four linear power amplifiers for wireless handset applications that were fabricated (or simulated) in four different bipolar technologies. The four bipolar technologies are currently competing to become, or remain as, the preferred bipolar technology for the commercial development of power amplifier modules. The four technologies are GaAs HBT, Si BJT, SiGe HBT, and InP HBT. The purpose of this work is to evaluate the performance of power amplifiers in each of these competing technologies in terms of typical linear handset PA requirements (i.e., P/sub OUT/, ACPR, PAE, P/sub GAIN/, and ruggedness).