GaAs MESFET fabrication using maskless ion implantation

A 2000-Å-diameter focused-ion beam from a Au-Si liquid-metal-alloy ion source was used to implant the doped regions of GaAs metal-semiconductor gate field-effect transistors. An Al stopping layer on the wafer was used to trap the Au ions. The 140-keV Si ++ beam component was deflected under computer...

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Bibliographic Details
Published inIEEE electron device letters Vol. 2; no. 6; pp. 152 - 154
Main Authors Kubena, R.L., Anderson, C.L., Seliger, R.L., Jullens, R.A., Stevens, E.H.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1981
Subjects
Contacts
Fabrication
FETs
Gallium arsenide
Gold
Implants
Ion implantation
Ion sources
MESFETs
Metallization
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Summary:A 2000-Å-diameter focused-ion beam from a Au-Si liquid-metal-alloy ion source was used to implant the doped regions of GaAs metal-semiconductor gate field-effect transistors. An Al stopping layer on the wafer was used to trap the Au ions. The 140-keV Si ++ beam component was deflected under computer control to implant 8 × 50 µm active channel regions and 16 × 50 µm contact regions. The devices were metallized using conventional lithography. DC electrical characteristics of the 1.5-µm-gate-length devices are comparable to those of conventionally processed devices of identical geometry.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25378