Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-...
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Published in | IEEE electron device letters Vol. 27; no. 5; pp. 326 - 328 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.05.2006
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2006.873756 |