Monolayer black phosphorus by sequential wet-chemical surface oxidation

We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation proce...

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Bibliographic Details
Published inRSC advances Vol. 9; no. 7; pp. 3570 - 3576
Main Authors Wild, Stefan, Lloret, Vicent, Vega-Mayoral, Victor, Vella, Daniele, Nuin, Edurne, Siebert, Martin, Koleśnik-Gray, Maria, Löffler, Mario, Mayrhofer, Karl J J, Gadermaier, Christoph, Krstić, Vojislav, Hauke, Frank, Abellán, Gonzalo, Hirsch, Andreas
Format Journal Article
LanguageEnglish
Published England Royal Society of Chemistry 25.01.2019
The Royal Society of Chemistry
Subjects
Chemistry
Chromophores
Diimide
Field effect transistors
Flakes
Ionic liquids
Monolayers
Organic chemistry
Oxidation
Phosphorus
Photooxidation
Semiconductor devices
Thickness
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Summary:We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.
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ISSN:2046-2069
2046-2069
DOI:10.1039/c8ra09069f