On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

• Published in: IEEE transactions on electron devices Vol. 53; no. 3; pp. 565 - 567
• Main Authors: Oxley, C.H., Uren, M.J., Coates, A., Hayes, D.G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum compounds; Aluminum gallium nitrides; Ambient temperature; Applied sciences; Carrier density; Carrier transport; Charge carrier density; Electronics; Exact sciences and technology; Gallium compounds; Gallium nitrides; GaN; heterojunction field-effect transistor (HFET); High electron mobility transistors; high-electron mobility transistor (HEMT); MODFETs; quasi-static model; Saturation; saturation velocity; Scattering parameters; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; sheet carrier concentration; Transistors; saturation velocity; quasi-static model; Charge carrier density; Thermal behavior; Phonon; Temperature effect; heterojunction field-effect transistor (HFET); sheet carrier concentration; Charge carrier temperature; Transport process; High electron mobility transistor; Static model; s parameter; GaN; Heterojunction field effect transistor; Electron density; high- electron mobility transistor (HEMT)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2005.863540

The temperature and carrier density dependence of electron intrinsic saturation velocity (v/sub si/) in a 0.3-/spl mu/m gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that v/sub si/ fell rapidly with increasing sheet carrier concentration (n/sub s/), but was only a very weak function of ambient temperature (T/sub amb/). This behavior is consistent with the hot-phonon model of carrier transport.