Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency

• Published in: Nano research Vol. 9; no. 2; pp. 363 - 371
• Main Authors: Cao, Yu, Che, Yuchi, Gui, Hui, Cao, Xuan, Zhou, Chongwu
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.02.2016; Springer Nature B.V
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Carbon; Carbon nanotubes; Chemistry and Materials Science; Condensed Matter Physics; Direct current; Gates; Materials Science; Nanostructure; Nanotechnology; Nanotubes; Purity; Radio frequencies; Radio frequency; Research Article; Self alignment; Semiconductor devices; Transconductance; Transistors; 半导体碳纳米管; 射频性能; 射频晶体管; 无线电频率; 直流特性; 碳纳米管晶体管; 纳米碳管; 超高纯度; maximum oscillation frequency; radio frequency transistors; carbon nanotube; T-shape gate; ultra-high purity
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-015-0915-7

In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （fT） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics.