Chemical etching of silicon assisted by graphene oxide

Silicon (Si) nanostructures have received much attention for their use in electronic devices and solar energy conversion. We performed chemical etching of Si(100) covered with graphene oxide (GO). After immersing the sample in a mixture of HF and H2O2 for 4 h or longer, the Si underneath the GO shee...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. 5; pp. 50924 - 50927
Main Authors Kubota, Wataru, Ishizuka, Ryuko, Utsunomiya, Toru, Ichii, Takashi, Sugimura, Hiroyuki
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.05.2019
Japanese Journal of Applied Physics
Subjects
Catalysis
Catalysts
Chemical etching
Chemical reactions
Electronic devices
Etching
Graphene
Hydrogen peroxide
Nanostructure
Noble metals
Organic chemistry
Sheets
Silicon
Solar energy conversion
Online AccessGet full text

Cover

More Information
Summary:Silicon (Si) nanostructures have received much attention for their use in electronic devices and solar energy conversion. We performed chemical etching of Si(100) covered with graphene oxide (GO). After immersing the sample in a mixture of HF and H2O2 for 4 h or longer, the Si underneath the GO sheets had dissolved more than that in the non-covered area, suggesting that the sheets can be a catalyst for etching reactions. Therefore, the wet chemical method without noble metal catalysts may be another facile and cost-effective method to design Si nanostructures.
Bibliography:JJAP-101355
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab17f3