Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS...

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Published inSensors (Basel, Switzerland) Vol. 20; no. 19; p. 5701
Main Authors Manh Hung, Nguyen, Nguyen, Chuong V., Arepalli, Vinaya Kumar, Kim, Jeha, Duc Chinh, Nguyen, Nguyen, Tien Dai, Seo, Dong-Bum, Kim, Eui-Tae, Kim, Chunjoong, Kim, Dojin
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 07.10.2020
MDPI
Subjects
Density functional theory
Electromagnetism
Flexible components
flexible sensor
Gas sensors
Gases
Glass substrates
Heat
High resistance
Illumination
Low temperature
N-type semiconductors
Polyethylene terephthalate
Radiation
Recovery time
Room temperature
Sensors
SnS thin film
Spectrum analysis
Substrates
Surface defects
Thin films
UV illumination
vacancy
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Summary:Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.
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ISSN:1424-8220
1424-8220
DOI:10.3390/s20195701