Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

• Published in: Journal of physics. D, Applied physics Vol. 40; no. 2; pp. 361 - 365
• Main Authors: Feng, W, Pan, J Q, Wang, L F, Bian, J, Wang, B J, Zhou, F, An, X, Zhao, L J, Zhu, H L, Wang, W
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 21.01.2007; Institute of Physics
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optics; Physics; Semiconductor lasers; laser diodes; Aluminium arsenides; Gallium arsenides; Photoluminescence; Multiple quantum well; Far field; VPE; Buried heterostructures; Experimental study; Quantum yield; Indium arsenides; Semiconductor lasers; MOVPE method; Quantum well lasers; Quaternary compounds
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/40/2/011

Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm-1. Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.