High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.

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Bibliographic Details
Published inIEEE electron device letters Vol. 8; no. 8; pp. 341 - 343
Main Authors Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A., Lindley, W.T.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1987
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Boron
Electronics
Exact sciences and technology
Nitrogen
Ohmic contacts
Photonic band gap
Probes
Schottky diodes
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Thermal conductivity
Transistors
Tungsten
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Summary:Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26653