Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Spectra of deep centers were studied in p-GaN(Mg) films prepared by metallorganic chemical vapor deposition on sapphire. In addition to the E v+0.16 eV Mg acceptor levels hole traps with a level near E v+0.4 eV were observed. Persistent photoconductivity measurements in p-GaN(Mg) films suggest that...

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Bibliographic Details
Published inSolid-state electronics Vol. 45; no. 2; pp. 255 - 259
Main Authors Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Usikov, A.S., Shmidt, N.M., Lundin, W.V.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2001
Subjects
Cathodoluminescence
Deep centers
Defects
GaN
Impurities
Presistent photoconductivity
Deep centers
Presistent photoconductivity
Impurities
Cathodoluminescence
GaN
Defects
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Summary:Spectra of deep centers were studied in p-GaN(Mg) films prepared by metallorganic chemical vapor deposition on sapphire. In addition to the E v+0.16 eV Mg acceptor levels hole traps with a level near E v+0.4 eV were observed. Persistent photoconductivity measurements in p-GaN(Mg) films suggest that the phenomenon is very likely due to centers other than Mg. Studies of nonuniformity of recombination properties revealed the presence of high density of defects with characteristic dimensions of several microns for which the density of nonradiative recombination defects was lower than in the matrix. It was also shown that the regions adjacent to pores in p-GaN films show a higher luminescence intensity and a higher magnitude of the electron beam induced current.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(00)00257-4