Photoelectrocatalytic properties of nitrogen doped TiO2/Ti photoelectrode prepared by plasma based ion implantation under visible light
Nitrogen doped TiO(2)/Ti photoelectrodes were prepared by a sequence of anodization and plasma based ion implantation (PBII). The properties of this photoelectrode were characterized by scanning electronic microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron...
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Published in | Journal of hazardous materials Vol. 175; no. 1-3; pp. 524 - 531 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Kidlington
Elsevier
15.03.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Nitrogen doped TiO(2)/Ti photoelectrodes were prepared by a sequence of anodization and plasma based ion implantation (PBII). The properties of this photoelectrode were characterized by scanning electronic microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectrometry (XPS), Ultra violet/visible light diffuse reflectance spectra (UV/vis/DRS), surface photovoltage (SPV), etc. Photoelectrocatalytic (PEC) performance of N-doped TiO(2)/Ti photoelectrode was tested under visible light irradiation. Their photocatalytic activity was evaluated by degradation of Rhodamine B (Rh.B). The results of XPS showed that nitrogen element was in form of three species, i.e. beta-N, molecular gamma-N and O-Ti-N, which existed in the lattices of TiO(2) and gaps between molecules. The results of UV/vis/DRS spectra and SPV revealed that proper doping of nitrogen could expand the response of photoelectrodes towards visible light and diminish the recombination of photo-generated holes and electrons, respectively. The photoelectrocatalytic activity of N-doped TiO(2)/Ti photoelectrodes was superior to those of undoped one under visible light region irradiation. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0304-3894 1873-3336 |
DOI: | 10.1016/j.jhazmat.2009.10.037 |